|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
New Product SUD50N04-8M8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.0088 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A)a 50 50 Qg (Typ.) 16 nC FEATURES * * * * * Halogen-free TrenchFET(R) Power MOSFET 100 % UIS Tested 100 % Rg Tested PWM Optimized RoHS COMPLIANT APPLICATIONS * LCD Display Backlight Inverters * DC/DC Converters TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N04-8M8P-4GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS Limit 40 20 50a 44 14b 11.2b 100 40 2.6b 30 45 48.1 30.8 3.1b 2.0b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 C) ID IDM IS IAS EAS Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68647 S-81008-Rev. A, 05-May-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 32 2.1 Maximum 40 2.6 Unit C/W New Product SUD50N04-8M8P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 20 A, dI/dt = 100 A/s, TJ = 25 C IS = 10 A 0.81 22 14 11 11 TC = 25 C VDD = 20 V, RL = 1 ID 20 A, VGEN = 10 V, Rg = 1 VDD = 20 V, RL = 1 ID 20 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 2.5 VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A VDS = 20 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 1.0 mA VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 70 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 15 A 50 0.0069 0.0084 75 2400 260 100 37 16 6.5 4.5 5.5 30 15 45 15 9 5 40 5 8.5 45 25 70 25 15 10 60 10 40 100 1.2 35 25 ns 56 24 nC pF 0.0088 0.0105 1.0 40 44 - 5.9 3.0 100 1 20 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68647 S-81008-Rev. A, 05-May-08 New Product SUD50N04-8M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) VGS = 4 V 80 100 60 60 40 40 TC = 25 C 20 TC = 125 C 0 TC = - 55 C 20 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 1.5 0.012 Transfer Characteristics R DS(on) - On-Resistance () 1.2 I D - Drain Current (A) 0.010 VGS = 4.5 V 0.008 0.9 0.6 TC = 25 C 0.3 TC = 125 C 0.0 0 1 2 3 4 5 TC = - 55 C VGS = 10 V 0.006 0.004 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 3200 Ciss 2400 C - Capacitance (pF) 10 On-Resistance vs. Drain Current ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V VDS = 20 V 6 VDS = 30 V 4 1600 800 Coss Crss 0 5 10 15 20 2 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 68647 S-81008-Rev. A, 05-May-08 Gate Charge www.vishay.com 3 New Product SUD50N04-8M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 ID = 20 A 1.7 R DS(on) - On-Resistance VGS = 10 V 10 I S - Source Current (A) 100 TJ = 25 C (Normalized) 1.4 VGS = 4.5 V 1.1 1 TJ = 150 C 0.1 TJ = - 55 C 0.01 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.030 ID = 7.2 A R DS(on) - On-Resistance () 0.025 0.2 0.020 VGS(th) Variance (V) 0.6 Source-Drain Diode Forward Voltage - 0.2 ID = 1 mA - 0.6 0.015 TJ = 125 C 0.010 ID = 250 A 0.005 0 2 4 TJ = 25 C 6 8 10 - 1.0 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage 500 1000 Threshold Voltage Limited by RDS(on)* 400 I D - Drain Current (A) 100 10 s 100 s 10 1 ms 10 ms, 100 ms, DC Power (W) 300 200 TA = 25 C 100 1 0.1 TC = 25 C Single Pulse BVDSS 0 0.0001 0.001 0.01 Time (s) 0.1 1 10 0.01 0.1 Single Pulse, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 68647 S-81008-Rev. A, 05-May-08 New Product SUD50N04-8M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 45 I D - Drain Current (A) Package Limited 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating*, Junction-to-Case 4.0 3.5 3.0 Power (W) Power (W) 0 25 50 75 100 125 150 2.5 2.0 1.5 1.0 0.5 0.0 20 10 0 0 25 50 75 100 125 150 70 60 50 40 30 TJ - Junction Temperature (C) TJ - Junction Temperature (C) Power Derating, Junction-to-Ambient Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68647 S-81008-Rev. A, 05-May-08 www.vishay.com 5 New Product SUD50N04-8M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted t1 t2 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68647. www.vishay.com 6 Document Number: 68647 S-81008-Rev. A, 05-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SUD50N04-8M8P |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |